Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films (Articolo in rivista)

Type
Label
  • Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.740-742.229 (literal)
Alternative label
  • Camarda, M. and Canino, A. and Fiorenza, P. and Severino, A. and Anzalone, R. and Privitera, S. and La Magna, A. and La Via, F. and Vecchio, C. and Mauceri, M. and Litrico, G. and Pecora, A. and Crippa, D. (2013)
    Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Camarda, M. and Canino, A. and Fiorenza, P. and Severino, A. and Anzalone, R. and Privitera, S. and La Magna, A. and La Via, F. and Vecchio, C. and Mauceri, M. and Litrico, G. and Pecora, A. and Crippa, D. (literal)
Pagina inizio
  • 229 (literal)
Pagina fine
  • 234 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 740-742 (literal)
Rivista
Note
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM Epitaxial Technology Center LPE (literal)
Titolo
  • Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films (literal)
Prodotto di
Autore CNR

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