Comparison between first- and second- generation praseodymium precusors for the MOCVD synthesis of praseodymium aluminate thin films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Comparison between first- and second- generation praseodymium precusors for the MOCVD synthesis of praseodymium aluminate thin films (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/cm070706t (literal)

Alternative label

• R. Lo Nigro, R. G. Toro, G. Malandrino, I. L. Fragala' (2007)
  Comparison between first- and second- generation praseodymium precusors for the MOCVD synthesis of praseodymium aluminate thin films
  in Chemistry of materials
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• R. Lo Nigro, R. G. Toro, G. Malandrino, I. L. Fragala' (literal)

Pagina inizio

• 4442 (literal)

Pagina fine

• 4446 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 19 (literal)

Rivista

• Chemistry of materials (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto per la Microelettronica e Microsistemi- CNR Dipartimento di Scienze Chimiche, Università di Catania, e INSTM , udr Catania (literal)

Titolo

• Comparison between first- and second- generation praseodymium precusors for the MOCVD synthesis of praseodymium aluminate thin films (literal)

Abstract

• Praseodymium aluminum oxide (PrAlOx) thin films have been grown by metal organic chemical vapor deposition (MOCVD) using two different multimetal sources consisting of mixtures of aluminum acetylacetonate (Al(acac)3) with two praseodymium precursors, namely, the praseodymium hexafluoroacetylacetonate diglyme adduct (Pr(hfa)3âdiglyme) and the praseodymium tetramethylheptanedionate (Pr(tmhd)3). Smooth and amorphous films have been deposited on Si(100) substrates. Their chemical composition and microstructure, investigated by EDX measurements and TEM analyses, are deeply affected by the nature of the precursor mixture. Optimal structural and compositional properties are achieved with a Al(acac)3-Pr(hfa)3âdiglyme mixture. Annealing procedures at 900 °C under an inert ambient atmospher do not affect the film crystallization. Preliminary electrical characterizations indicate a dielectric constant of about 12. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR

• ROBERTA GRAZIA TORO (Unità di personale interno)
• RAFFAELLA LO NIGRO (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR di

• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Chemistry of materials (Rivista)