Optimization of the Sputtering Deposition Parameters of Highly Oriented Piezoelectric AlN films (Abstract/Poster in atti di convegno)

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Label
  • Optimization of the Sputtering Deposition Parameters of Highly Oriented Piezoelectric AlN films (Abstract/Poster in atti di convegno) (literal)
Anno
  • 2000-01-01T00:00:00+01:00 (literal)
Alternative label
  • Cinzia Caliendo *, Patrizia Imperatori **, Enrico Verona * (2000)
    Optimization of the Sputtering Deposition Parameters of Highly Oriented Piezoelectric AlN films
    in IEEE International Ultrasonics Symposium 2000, Puerto Rico, October 22-25, 2000
    (literal)
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  • Cinzia Caliendo *, Patrizia Imperatori **, Enrico Verona * (literal)
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  • 324 (literal)
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  • 324 (literal)
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  • 1 (literal)
Note
  • Abstract (literal)
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  • * Istituto di Acustica Corbino, IDAC ** Istituto di Struttura della Materia, ISM (literal)
Titolo
  • Optimization of the Sputtering Deposition Parameters of Highly Oriented Piezoelectric AlN films (literal)
Abstract
  • A1N films have been succesfully deposited by reactive sputtering technique on silicon substrates with different interface layers. Uniform, crack free, c-axis oriented, highly adhesive films have been obtained in a thickness range between 1 and 5.6 pm. Measurements of the d33 piezoelectric strain constant have been performed in order to evaluate the piezoelectric characteristics of the films. X-ray diffraction measurements (XRD) have been performed to investigate the crystal structure and the crystallographic orientation of the films, in order to optimize the deposition process parameters and to study the influence of the substrate on the AlN polycrystals orientation. (literal)
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