Structural and acoustic characterization of highly oriented piezoelectric AlN films (Contributo in atti di convegno)

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Label
  • Structural and acoustic characterization of highly oriented piezoelectric AlN films (Contributo in atti di convegno) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1117/12.425239 (literal)
Alternative label
  • C.CALIENDO * , P.IMPERATORI **, E.VERONA * (2001)
    Structural and acoustic characterization of highly oriented piezoelectric AlN films
    in Process and Equipment Control in Microelectronic Manufacturing II, Edinburgh (UK), MAY 30-31, 2001
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C.CALIENDO * , P.IMPERATORI **, E.VERONA * (literal)
Pagina inizio
  • 64 (literal)
Pagina fine
  • 72 (literal)
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  • http://dx.doi.org/10.1117/12.425239 (literal)
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  • Process and Equipment Control in Microelectronic Manifacturing (literal)
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  • 4405 (literal)
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  • 4405 (literal)
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  • 9 (literal)
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  • * Istituto di Acustica \"0.M.Corbino\"- CNR, Via del Fosso del Cavaliere 100,00133 Rome - Italy ** Istituto di Chimica dei Materiali - CNR, Via Salaria km. 29,300, 00016 Monterotondo (Rome) - Italy (literal)
Titolo
  • Structural and acoustic characterization of highly oriented piezoelectric AlN films (literal)
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  • 9780819441065 (literal)
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  • SPIE (literal)
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  • Martin Fallon (literal)
Abstract
  • Aluminum nitride piezoelectric films have been grown by reactive sputtering technique on different substrates, chosen according to their attractive properties such as high acoustic wave velocity (Al2O3, MgO, Si) and possibility to integrate the acoustic device with the electric circuitry (Si, GaAs). We have studied the AlN properties within a thickness range of 2.1 - 6.3 micrometers by means of X-ray diffraction analysis and piezoelectric d33 constants measurements, in order to define the best sputtering parameters that ensure the best quality of the AlN films (literal)
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