Auger sputtering profiling of an Al0.3Ga0.7As/GaAs superlattice grown by molecular beam epitaxy (Articolo in rivista)

Type
Label
  • Auger sputtering profiling of an Al0.3Ga0.7As/GaAs superlattice grown by molecular beam epitaxy (Articolo in rivista) (literal)
Anno
  • 1992-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/0169-4332(92)90326-S (literal)
Alternative label
  • G. Cossu, G.M. Ingo, G. Mattogno, G. Padeletti, S. Viticoli (1992)
    Auger sputtering profiling of an Al0.3Ga0.7As/GaAs superlattice grown by molecular beam epitaxy
    in Applied surface science; North Holland Pub. Co., Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Cossu, G.M. Ingo, G. Mattogno, G. Padeletti, S. Viticoli (literal)
Pagina inizio
  • 708 (literal)
Pagina fine
  • 712 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 56-8 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • G. Cossu, G.M. Ingo, G. Mattogno, G. Padeletti, S. Viticoli Istituto di Teoria e Struttura Elettronica, CNR, C.P. 10, 00016 Monterotondo Stazione, Roma, Italy (literal)
Titolo
  • Auger sputtering profiling of an Al0.3Ga0.7As/GaAs superlattice grown by molecular beam epitaxy (literal)
Abstract
  • The layered structure, the composition of each layer and the interfacial sharpness in an Al0.3Ga0.7As/GaAs superlattice, grown by molecular beam epitaxy (MBE), have been studied by means of Auger depth profiling. In order to improve the depth resolution and then to reduce the uncertainty in measuring the interfacial sharpness, the Auger and argon ion beam sputtering parameters have been optimized and an ultimate depth resolution of 3.17 nm has been achieved using a differential pumping-type ion gun with a very low ion current. Under these conditions the layered structure and the abruptness of the change in composition at the interiace between two thin adjacent layers has been well disclosed. © 1992. (literal)
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