DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY (Articolo in rivista) (literal)

Anno

• 1994-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/0921-5107(94)90053-1 (literal)

Alternative label

• M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, S. Viticoli (1994)
  DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, S. Viticoli (literal)

Pagina inizio

• 228 (literal)

Pagina fine

• 231 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 28 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IST CHIM MAT, CP 10, I-00016 MONTEROTONDO, ITALY (literal)

Titolo

• DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY (literal)

Abstract

• Highly strained InAs/InP heterostructures and InxGa1-xAs/InAs single quantum wells on InP(100) substrates were grown by molecular beam epitaxy. The fabricated heterostructures were investigated by means of the selected-area X-ray photoelectron spectroscopy (SAXPS) depth profiling technique. The depth resolution of the SAXPS profiling was found to be limited mainly by the photoelectron information depth. It was demonstrated that the ternary compound InAsxPx is formed on the InP substrate during its deoxidation under an arsenic flux. The thickness of the InAsxP1-x interfacial sublayer was determined and the segregation of indium on the sample and substrate surfaces was revealed from the SAXPS profiles. (literal)

Prodotto di

• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR

• MARIA RITA BRUNI (Unità di personale interno)
• SAULIUS KACIULIS (Persona)
• SESTO VITICOLI (Persona)

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• Parole chiave di "DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR di

• SAULIUS KACIULIS (Persona)
• SESTO VITICOLI (Persona)
• MARIA RITA BRUNI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Parole chiave di "DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY" (Insieme di parole chiave)