http://www.cnr.it/ontology/cnr/individuo/prodotto/ID213333
Investigation of CdS passivation layers on HgxCd1-xTe (Articolo in rivista)
- Type
- Label
- Investigation of CdS passivation layers on HgxCd1-xTe (Articolo in rivista) (literal)
- Anno
- 1994-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/sia.740220144 (literal)
- Alternative label
S. Kaciulis, G. Mattogno, S. Viticoli, M.E. Marini, F. Cesqui, S. Alfuso, A. Mercuri (1994)
Investigation of CdS passivation layers on HgxCd1-xTe
in SIA. Surface and interface analysis
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- S. Kaciulis, G. Mattogno, S. Viticoli, M.E. Marini, F. Cesqui, S. Alfuso, A. Mercuri (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, IST CHIM MAT, CP 10, I-00016 ROME, ITALY,
ALENIA, I-00131 ROME, ITALY (literal)
- Titolo
- Investigation of CdS passivation layers on HgxCd1-xTe (literal)
- Abstract
- CdS thin films were deposited on sapphire substrates and on the HgxCd1-xTe epitaxial and single crystal samples by using chemical decomposition on thiourea and anodic non-aqueous sulphidation techniques, respectively. The chemical composition and depth profiles of deposited films were investigated by selected area XPS combined with Ar+ ion sputtering. Lateral homogeneity of CdS films was studied by using scanning Auger microscopy. Nearly stoichiometric CdS films were obtained on sapphire and HgxCe1-xTe. The thickness, chemical composition and sputtering rate at 2 keV ion energy were determined from XPS data. In both cases (either deposited on sapphire or on HgxCd1-xTe) the CdS films were found to be very non-homogeneous in thickness. (literal)
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