Valence band states of H:GaAs (110) (Articolo in rivista)

Type
Label
  • Valence band states of H:GaAs (110) (Articolo in rivista) (literal)
Anno
  • 1994-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/0039-6028(94)91510-5 (literal)
Alternative label
  • A. Plesanovas, A. Castellani Tarabini, I. Abbati, S. Kaciulis, G. Paolicelli, L. Pasquali, A. Ruocco, S. Nannarone (1994)
    Valence band states of H:GaAs (110)
    in Surface science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Plesanovas, A. Castellani Tarabini, I. Abbati, S. Kaciulis, G. Paolicelli, L. Pasquali, A. Ruocco, S. Nannarone (literal)
Pagina inizio
  • 890 (literal)
Pagina fine
  • 895 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 307 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • UNIV MODENA, DIPARTIMENTO FIS, VIA G CAMPI 213-A, I-41100 MODENA, ITALY, Semicond. Phys. Inst., Vilnius, Lithuania (literal)
Titolo
  • Valence band states of H:GaAs (110) (literal)
Abstract
  • The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ultraviolet photoemission spectroscopy along the XBAR'-MBAR and XBAR-MBAR symmetry lines and in the high symmetry points of the surface Brillouin zone. Three surface state bands are resolved in the first 5 eV below the upper valence band edge. A comparison with theoretical band structure calculations yields a satisfactory agreement, giving evidence of hydrogen induced GaAs(110) surface derelaxation. The clean GaAs(110) surface electronic band structure is studied comparing results with available theoretical and experimental data. (literal)
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