Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures (Articolo in rivista)

Type
Label
  • Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures (Articolo in rivista) (literal)
Anno
  • 1995-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/0022-0248(94)00953-8 (literal)
Alternative label
  • M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, L.G. Quagliano, N. Tomassini, B. Juserand (1995)
    Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures
    in Journal of crystal growth
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, L.G. Quagliano, N. Tomassini, B. Juserand (literal)
Pagina inizio
  • 123 (literal)
Pagina fine
  • 127 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 150 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, ICMAT, I-00016 MONTEROTONDO, ITALY, CNR, IMAI, I-00016 MONTEROTONDO, ITALY, CTR NATL ETUD TELECOMMUN, LAB BAGNEUX, F-92220 BAGNEUX, FRANCE (literal)
Titolo
  • Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures (literal)
Abstract
  • We have investigated the role of the arsenic flux used during the substrate deoxidation process in the MBE (molecular beam epitaxy) growth of strained InAs/InP heterostructures. Two different experiments were performed: (i) thermal cleaning of the InP wafer under an As flux at different exposure times and (ii) the growth of very thin InAs layers (3-9 ML). The samples grown were characterized by Raman spectroscopy and selected area X-ray photoelectron spectroscopy. The results obtained demonstrated the formation of an InAsxP1-x sublayer at the interface of the InAs/InP system. The annealing of InP under an As flux promotes not only As --> P substitution on the surface, but also the subsequent diffusion of As atoms into the deeper subsurface region of InP. (literal)
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