http://www.cnr.it/ontology/cnr/individuo/prodotto/ID212943
Analyses of the As doping of SiO2/Si/SiO2 nanostructures (Articolo in rivista)
- Type
- Label
- Analyses of the As doping of SiO2/Si/SiO2 nanostructures (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/pssc.201000044 (literal)
- Alternative label
F. Ruffino, M.V. Tomasello, M. Miritello, R. De Bastiani, G. Nicotra, C. Spinella, M.G. Grimaldi (2011)
Analyses of the As doping of SiO2/Si/SiO2 nanostructures
in Physica status solidi. C, Current topics in solid state physics (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Ruffino, M.V. Tomasello, M. Miritello, R. De Bastiani, G. Nicotra, C. Spinella, M.G. Grimaldi (literal)
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- ISI Web of Science (WOS) (literal)
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- [ 1 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[ 2 ] IMM-CNR (literal)
- Titolo
- Analyses of the As doping of SiO2/Si/SiO2 nanostructures (literal)
- Abstract
- We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO2(70nm)/Si(30nm)/SiO2(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO2/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm(2). The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated. (literal)
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