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Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation (Articolo in rivista)
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- Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation (Articolo in rivista) (literal)
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- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2013.02.008 (literal)
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P. Graziosi (a,b), M. Prezioso (b), A. Gambardella (b), C. Kitts (b,1), R.K. Rakshit (b,2), A. Riminucci (b), I. Bergenti (b), F. Borgatti (b), C. Pernechele (c), M. Solzi (c), D. Pullini (d), D. Busquets-Mataix (a,e), V.A. Dediu (b) (2013)
Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation
in Thin solid films (Print); Elsevier, Amsterdam (Paesi Bassi)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- P. Graziosi (a,b), M. Prezioso (b), A. Gambardella (b), C. Kitts (b,1), R.K. Rakshit (b,2), A. Riminucci (b), I. Bergenti (b), F. Borgatti (b), C. Pernechele (c), M. Solzi (c), D. Pullini (d), D. Busquets-Mataix (a,e), V.A. Dediu (b) (literal)
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- (a) Instituto de Tecnología de Materiales, Universidad Politécnica de Valencia, Camino de Vera s/n, 46022, Valencia, Spain
(b) CNR - ISMN, Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati, v. Gobetti 101, 40129, Bologna, Italy
(c) Dipartimento di Fisica, Università di Parma, Area delle Scienze 7/A, 43124, Parma, Italy
(d) Centro Ricerche Fiat, 10043, Orbassano (TO), Italy
(e) Departamento de Ingeniería Mecánica y de Materiales, Universidad Politécnica de Valencia, Camino de Vera s/n, 46022, Valencia, Spain
(1) Present address: Department of Physical Chemistry, Chalmers University of Technology, 41296, Gothenburg, Sweden.
(2) Present address: Quantum Phenomena and Applications Division, National Physical Laboratory, Council of Scientific and Industrial Research, Dr. K. S. Krishnan Marg, New Delhi 110012, India. (literal)
- Titolo
- Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation (literal)
- Abstract
- We report on the optimisation of the growth conditions of manganite La0.7Sr0.3MnO3 thin films prepared by
Channel Spark Ablation (CSA). CSA belongs to pulsed electron deposition methods and its energetic and deposition
parameters are quite similar to those of pulsed laser deposition. The method has been already proven
to provide manganite films with good magnetic properties, but the films were generally relatively rough
(a few nm coarseness). Here we show that increasing the oxygen deposition pressure with respect to previously
used regimes, reduces the surface roughness down to unit cell size while maintaining a robust magnetism.
We analyse in detail the effect of other deposition parameters, like accelerating voltage, discharging
energy, chamber pressure and substrate temperature and provide on this basis a set of optimal conditions
for the growth of atomically flat films. The thicknesses for which atomically flat surface was achieved is as
high as about 10-20 nm, corresponding to films with room temperature magnetism. We believe such magnetic
layers represent appealing and suitable electrodes for various spintronic devices. (literal)
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