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Chemical insight into electroforming of resistive switching manganite heterostructures (Articolo in rivista)

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Chemical insight into electroforming of resistive switching manganite heterostructures (Articolo in rivista) (literal)

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Francesco Borgatti,*a Chanwoo Park,*b Anja Herpers,b Francesco Offi,c Ricardo Egoavil,d Yoshiyuki Yamashita,e Anli Yang,e Masaaki Kobata,e Keisuke Kobayashi,e Jo Verbeeck,d Giancarlo Panaccione f and Regina Dittmann b (2013)
Chemical insight into electroforming of resistive switching manganite heterostructures
in Nanoscale (Print); Royal Society of Chemistry, Cambridge (Regno Unito)
(literal)

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Francesco Borgatti,*a Chanwoo Park,*b Anja Herpers,b Francesco Offi,c Ricardo Egoavil,d Yoshiyuki Yamashita,e Anli Yang,e Masaaki Kobata,e Keisuke Kobayashi,e Jo Verbeeck,d Giancarlo Panaccione f and Regina Dittmann b (literal)

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(a) CNR - Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), via P. Gobetti 101, I-40129 Bologna, Italy. E-mail: francesco.borgatti@cnr.it; Fax: +39 051 6398540; Tel: +39 051 6398518 (b) Peter Gruenberg Institute (PGI-7) and JARA-FIT Forschungszentrum Juelich GmbH, 52425 Juelich, Germany. E-mail: park@IWE.RWTH-Aachen.de (c) CNISM and Dipartimento di Scienze, Universit`a Roma Tre, Rome, Italy (d) EMAT, Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium (e) NIMS Beamline Station at Spring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148, Japan (f) CNR - Istituto Officina dei Materiali (IOM), Laboratorio TASC, S.S.14, Km 163.5, I-34149 Trieste, Italy (literal)

Titolo

Chemical insight into electroforming of resistive switching manganite heterostructures (literal)

Abstract

We have investigated the role of the electroforming process in the establishment of resistive switching behaviour for Pt/Ti/Pr0.5Ca0.5MnO3/SrRuO3 layered heterostructures (Pt/Ti/PCMO/SRO) acting as nonvolatile Resistance Random Access Memories (RRAMs). Electron spectroscopy measurements demonstrate that the higher resistance state resulting from electroforming of as-prepared devices is strictly correlated with the oxidation of the top electrode Ti layer through field-induced electromigration of oxygen ions. Conversely, PCMO exhibits oxygen depletion and downward change of the chemical potential for both resistive states. Impedance spectroscopy analysis, supported by the detailed knowledge of these effects, provides an accurate model description of the device resistive behaviour. The main contributions to the change of resistance from the as-prepared (low resistance) to the electroformed (high resistance) states are respectively due to reduced PCMO at the boundary with the Ti electrode and to the formation of an anisotropic n-p junction between the Ti and the PCMO layers. (literal)

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