Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells (Articolo in rivista)

Type
Label
  • Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells (Articolo in rivista) (literal)
Anno
  • 1996-01-01T00:00:00+01:00 (literal)
Alternative label
  • M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, S. Viticoli (1996)
    Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, S. Viticoli (literal)
Pagina inizio
  • 231 (literal)
Pagina fine
  • 236 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 203 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IST CHIM MAT, PO Box 10, I-00016 MONTEROTONDO, ITALY. (literal)
Titolo
  • Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells (literal)
Abstract
  • Highly strained In0.53Ga0.47As/InAs/In0.53Ga0.47As heterostructures were grown on InP (100) substrates by using molecular beam epitaxy. The samples have been investigated by means of the selected-area X-ray spectroscopy and secondary ion mass spectrometry depth profiling techniques. The heterointerface widths in the samples grown under diverse MBE conditions (standard and virtual surfactant) have been analysed considering the limitations of the experimental depth resolution. The main factors limiting the depth resolution are disclosed. The asymmetry of quantum wells caused by different diffusion rates of indium in the heterointerfaces is revealed. (literal)
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