MOCVD approach to perovskite based thin films: From high Tc superconductors to giant dielectric constant materials (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• MOCVD approach to perovskite based thin films: From high Tc superconductors to giant dielectric constant materials (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/1757-899X/8/1/012005 (literal)

Alternative label

• G Malandrino, R G Toro, R Lo Nigro, I L Fragalà (2010)
  MOCVD approach to perovskite based thin films: From high Tc superconductors to giant dielectric constant materials
  in IOP conference series. Materials science and engineering (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• G Malandrino, R G Toro, R Lo Nigro, I L Fragalà (literal)

Pagina inizio

• 012005-1 (literal)

Pagina fine

• 012005-7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 8 (literal)

Rivista

• IOP conference series. Materials science and engineering (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 7 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, Viale A. Doria 6, 95125 Catania, Italy. IMM, sezione di Catania, CNR, Stradale Primo Sole n 50, 95121 Catania, Italy. (literal)

Titolo

• MOCVD approach to perovskite based thin films: From high Tc superconductors to giant dielectric constant materials (literal)

Abstract

• Perovskite thin films with various functional properties have been synthesized through the Metal Organic Chemical Vapour Deposition (MOCVD). The MOCVD processes, used for the fabrication of a variety of advanced materials in thin film form, rely upon application of a molten multi-element source. The challenging in-situ strategy involves the use of a molten source consisting of a second-generation M(hfa)(n)center dot polyether (M = La, Ca, and Y; polyether = diglyme or tetraglyme) precursor which acts as a solvent for the other species. The approach is reported as a general route to the fabrication of multi-element oxides. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR

• ROBERTA GRAZIA TORO (Unità di personale interno)
• RAFFAELLA LO NIGRO (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR di

• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• IOP conference series. Materials science and engineering (Rivista)