Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator (Articolo in rivista)

Type
Label
  • Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4789625 (literal)
Alternative label
  • Mio AM, D'Arrigo G, Milazzo RG, Rimini E, Spinella C, Peto L, Nadzeyka A, Bauerdick S (2013)
    Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mio AM, D'Arrigo G, Milazzo RG, Rimini E, Spinella C, Peto L, Nadzeyka A, Bauerdick S (literal)
Pagina inizio
  • 044315 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 113 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] IMM CNR, I-95121 Catania, Italy [ 2 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy [ 3 ] Raith GmbH, D-44263 Dortmund, Germany (literal)
Titolo
  • Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator (literal)
Abstract
  • A nano-sized ion beam apparatus has been used as maskless lithography to implant 20 keV Ga+ ions into a 26 nm thick silicon crystalline film on insulator. The ion beam, with about 5 nm standard deviation, delivered few hundred ions during a single shot. Circular areas with nominal diameter of 20 or 50 nm were irradiated to a fluence of 5 x 10(14)/cm(2). Transmission electron microscopy evidenced that the damaged regions are characterized by an irregular contour with many disordered filaments. Damage extends across the layer thickness and fast Fourier transform analysis indicates that implantation causes the amorphization of a region which extends beyond the nominal diameter. In situ annealing experiments demonstrated that the disordered filamentary regions disappear in the 250-450 degrees C temperature range and the interfaces with the surrounding crystalline regions sharpen. A temperature as high as 600 degrees C is required to fully re-crystallize the amorphous core of the implanted dots. Reordering occurs by multi-orientation lateral solid-phase epitaxial growth and the breaking of (111) and (101) interfaces, due to the formation of twins, triggers a fast crystallization kinetics. Rapid thermal annealing (890 degrees C-10 s) completely crystallizes the amorphous regions, twins are absent and small cluster of defects remains instead. Preliminary scanning capacitance measurements indicate that the implanted atoms, after crystallization, are electrically active. The implant method is then a viable processing step for the doping of non-bulk fully depleted ultra-thin-body MOSFET. (literal)
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