X-RAY-INDUCED REDUCTION EFFECTS AT CEO2 SURFACES - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• X-RAY-INDUCED REDUCTION EFFECTS AT CEO2 SURFACES - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY (Articolo in rivista) (literal)

Anno

• 1991-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.577638 (literal)

Alternative label

• E. PAPARAZZO, G.M. INGO, N. ZACCHETTI (1991)
  X-RAY-INDUCED REDUCTION EFFECTS AT CEO2 SURFACES - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY
  in Journal of vacuum science & technology. A. Vacuum, surfaces, and films; American Vacuum Society, American Institute Of Physics, Melville (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• E. PAPARAZZO, G.M. INGO, N. ZACCHETTI (literal)

Pagina inizio

• 1416 (literal)

Pagina fine

• 1420 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 9 (literal)

Rivista

• Journal of vacuum science & technology. A. Vacuum, surfaces, and films (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• E. PAPARAZZO [1], G.M. INGO [2], N. ZACCHETTI [3] [1] CNR, ISTITUTO STRUTTURA MATERIA, VIA E FERMI 38, I-00044 FRASCATI, ITALY. [2] CNR, ISTITUTO TEORIA & STRUTTURA ELETTRONICA, I-00016 MONTEROTONDO, ITALY [3] CENTRO SVILUPPO MATERIALI SPA, ROME, ITALY (literal)

Titolo

• X-RAY-INDUCED REDUCTION EFFECTS AT CEO2 SURFACES - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY (literal)

Abstract

• XPS techniques are used to study the effects of Al K-alpha x-rays on the surface chemical composition of CeO2. We find that prolonged exposures cause the formation of some Ce3+ oxidic species at the surface. We have studied the Ce 3p, Ce 3d, O 1s, Ce 4p, Ce 4d, and valence band regions in an attempt to localize the depth of damage. Consideration of published formulations for electron attenuation lengths and electron inelastic mean free paths indicates that the chemical reduction occurs mainly in the first 15-20 angstrom from the surface. Our results show that some of the XPS features, usually referred to as excited electronic states of ceria, are in fact induced by prolonged exposures to the x rays. (literal)

Editore

• American Vacuum Society, American Institute Of Physics (Editore)

Prodotto di

• Sintesi e crescita di film e superfici nanostrutturate (PM.P05.004.002) (Modulo)
• Institute of structure of matter (ISM) (Istituto)
• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR

• ERNESTO PAPARAZZO (Unità di personale interno)
• GABRIEL MARIA INGO (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "X-RAY-INDUCED REDUCTION EFFECTS AT CEO2 SURFACES - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ERNESTO PAPARAZZO (Unità di personale interno)
• GABRIEL MARIA INGO (Unità di personale interno)

Prodotto

• Institute of structure of matter (ISM) (Istituto)
• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)
• Sintesi e crescita di film e superfici nanostrutturate (PM.P05.004.002) (Modulo)

Editore di

• American Vacuum Society, American Institute Of Physics (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. A. Vacuum, surfaces, and films (Rivista)

Insieme di parole chiave di

• Parole chiave di "X-RAY-INDUCED REDUCTION EFFECTS AT CEO2 SURFACES - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY" (Insieme di parole chiave)