http://www.cnr.it/ontology/cnr/individuo/prodotto/ID211376
Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor (Contributo in atti di convegno)
- Type
- Label
- Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor (Contributo in atti di convegno) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.proeng.2012.09.200 (literal)
- Alternative label
L. Maiolo (1), F. Maita (1), A. Pecora (1), M. Rapisarda (1), L. Mariucci (1), M. Benwadih (2), S. Jacob (2), I. Chartier (2) and R. Coppard (2) (2012)
Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor
in Eurosensors XXVI, Kraków, Poland, September 9-12, 2012
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- L. Maiolo (1), F. Maita (1), A. Pecora (1), M. Rapisarda (1), L. Mariucci (1), M. Benwadih (2), S. Jacob (2), I. Chartier (2) and R. Coppard (2) (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (1) IMM-CNR, (2) CEA/Liten/DTNM/LCEI (literal)
- Titolo
- Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor (literal)
- Abstract
- In this work we present a flexible pyroelectric capacitive sensor, based on PVDF-TrFE, fabricated on a ultra-thin
polyimide film (8 ?m thick) connected to a fully printed p-channel organic thin film transistor that is used to amplify
the sensor signal. We fabricate a standalone device, exploiting a multi-foil approach, where the pyroelectric capacitor
was glued on the organic TFT substrate, that consists of a PEN foil 125 ?m thick, previously made in CEA-LITEN
labs. The pyroelectric properties of the PVDF-TrFE capacitor were enhanced using a thermal poling procedure before
the TFT integration. The sensor behavior was analyzed at different working frequencies (up to 500 Hz) under a
specific infrared (IR) radiation provided by a He-Ne laser, with a wavelength of 632 nm and maximum power of 5
mW. An output signal of few millivolts was observed, exploiting the pre-amplification of the fully printed organic
transistor. (literal)
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