Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor (Contributo in atti di convegno)

Type
Label
  • Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor (Contributo in atti di convegno) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.proeng.2012.09.200 (literal)
Alternative label
  • L. Maiolo (1), F. Maita (1), A. Pecora (1), M. Rapisarda (1), L. Mariucci (1), M. Benwadih (2), S. Jacob (2), I. Chartier (2) and R. Coppard (2) (2012)
    Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor
    in Eurosensors XXVI, Kraków, Poland, September 9-12, 2012
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • L. Maiolo (1), F. Maita (1), A. Pecora (1), M. Rapisarda (1), L. Mariucci (1), M. Benwadih (2), S. Jacob (2), I. Chartier (2) and R. Coppard (2) (literal)
Pagina inizio
  • 526 (literal)
Pagina fine
  • 529 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 47 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) IMM-CNR, (2) CEA/Liten/DTNM/LCEI (literal)
Titolo
  • Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor (literal)
Abstract
  • In this work we present a flexible pyroelectric capacitive sensor, based on PVDF-TrFE, fabricated on a ultra-thin polyimide film (8 ?m thick) connected to a fully printed p-channel organic thin film transistor that is used to amplify the sensor signal. We fabricate a standalone device, exploiting a multi-foil approach, where the pyroelectric capacitor was glued on the organic TFT substrate, that consists of a PEN foil 125 ?m thick, previously made in CEA-LITEN labs. The pyroelectric properties of the PVDF-TrFE capacitor were enhanced using a thermal poling procedure before the TFT integration. The sensor behavior was analyzed at different working frequencies (up to 500 Hz) under a specific infrared (IR) radiation provided by a He-Ne laser, with a wavelength of 632 nm and maximum power of 5 mW. An output signal of few millivolts was observed, exploiting the pre-amplification of the fully printed organic transistor. (literal)
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