Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4769819 (literal)

Alternative label

• M. Rapisarda (1), G. Fortunato (1), A. Valletta (1), S. Jacob (2), M. Benwadih (2), R. Coppard (2), I. Chartier (2), and L. Mariucci (2) (2012)
  Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Rapisarda (1), G. Fortunato (1), A. Valletta (1), S. Jacob (2), M. Benwadih (2), R. Coppard (2), I. Chartier (2), and L. Mariucci (2) (literal)

Pagina inizio

• 233304-1 (literal)

Pagina fine

• 233304-4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 101 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (1) CNR-IMM, (2) CEA/Liten/DTNM/LCEI (literal)

Titolo

• Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors (literal)

Abstract

• Bias stress instability has been investigated in printed p-channel organic thin film transistors. The observed instability is related to two mechanisms: one, dominating at low T and causing \"mobile ions\" like threshold voltage variations is probably due to creation/annihilation of acceptor-like states; the second one, causing charge-trapping like instability, dominates at high T. High drain voltage bias stress experiments, inducing device self-heating, present threshold voltage variations, suggest a channel temperature rise ranging from 50 to 60 ?C. The results point out the role of self-heating on the bias-stress instability, which is related to a combination of bias and temperature conditions. (literal)

Prodotto di

• Elettronica su plastica basata su materiali organici ed ossidi semiconduttori (MD.P05.001.006) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• LUIGI MARIUCCI (Unità di personale interno)
• Matteo RAPISARDA (Persona)
• ANTONIO VALLETTA (Unità di personale interno)
• GUGLIELMO FORTUNATO (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Elettronica su plastica basata su materiali organici ed ossidi semiconduttori (MD.P05.001.006) (Modulo)

Autore CNR di

• GUGLIELMO FORTUNATO (Persona)
• ANTONIO VALLETTA (Unità di personale interno)
• Matteo RAPISARDA (Persona)
• LUIGI MARIUCCI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)