http://www.cnr.it/ontology/cnr/individuo/prodotto/ID211358
Current spreading effects in fully printed p-channel organic thin film transistors with Schottky source-drain contacts (Articolo in rivista)
- Type
- Label
- Current spreading effects in fully printed p-channel organic thin film transistors with Schottky source-drain contacts (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.orgel.2012.10.002 (literal)
- Alternative label
L. Mariucci (1), M. Rapisarda (1), A. Valletta (1), S. Jacob (2), M. Benwadih (2), G. Fortunato (1) (2013)
Current spreading effects in fully printed p-channel organic thin film transistors with Schottky source-drain contacts
in Organic electronics (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- L. Mariucci (1), M. Rapisarda (1), A. Valletta (1), S. Jacob (2), M. Benwadih (2), G. Fortunato (1) (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (1) CNR - IMM;
(2) CEA/Liten/DTNM/LCEI (literal)
- Titolo
- Current spreading effects in fully printed p-channel organic thin film transistors with Schottky source-drain contacts (literal)
- Abstract
- Contact effects have been analyzed, by using numerical simulations, in fully printed
p-channel OTFTs based on a pentacene derivative as organic semiconductor and with Au
source/drain contacts. Considering source-drain Schottky contacts, with a barrier height
of 0.46 eV, device characteristics can be perfectly reproduced. From the detailed analysis
of the current density we have shown that current spreading occurs at the source contact,
thus influencing the effective contact resistance. At low Vds and for a given Vgs, the current
is mainly injected from an extended source contact region and current spreading remains
basically constant for increasing Vds. However, by increasing Vds the depletion layer of the
Schottky contact expands and reaches the insulator-semiconductor interface, causing the
pinch-off of the channel at the source end (Vdsat1). For Vds > Vdsat1 the current injected from
the edge of the source contact rapidly increases while the current injected from the
remaining part of the source contact basically saturates. Current spreading shows a
Vgs-dependence, since the contact injection area depends on the channel resistance and
also barrier lowering of the Schottky source contact depends upon Vgs. The injected current
from the edge of the source contact can be reproduced using the conventional diode
current expression, assuming a constant value for the zero barrier lowering saturation
current and considering a Vgs-dependent barrier lowering. The presented analysis clarifies
the Vgs-dependence of the contact current-voltage characteristics and points out that the
I-V contact characteristics cannot directly be related to a single diode characteristics.
Indeed, the contact characteristics result from the combination of two rather different
regimes: at low Vds the current is injected from an extended source contact region with
a current spreading related to Vgs, while for Vds above the pinch-off of the channel at source
end, the current is injected primarily from the edge of the source contact and is strongly
enhanced by the barrier lowering. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di
