Influence of InAs, AlAs delta layers on the optical, electronic, and thermal characteristics of strain-compensated GaInAs/AlInAs quantum-cascade lasers (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Influence of InAs, AlAs delta layers on the optical, electronic, and thermal characteristics of strain-compensated GaInAs/AlInAs quantum-cascade lasers (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• Vitiello, MS; Gresch, T; Lops, A; Spagnolo, V; Scamarcio, G; Hoyler, N; Giovannini, M; Faist, J (2007)
  Influence of InAs, AlAs delta layers on the optical, electronic, and thermal characteristics of strain-compensated GaInAs/AlInAs quantum-cascade lasers
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Vitiello, MS; Gresch, T; Lops, A; Spagnolo, V; Scamarcio, G; Hoyler, N; Giovannini, M; Faist, J (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 91 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Studi Bari, Dipartimento Interateneo Fis M Merlin, CNR, INFM Reg Lab LIT, I-70126 Bari, Italy; Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland; Univ Politecn Bari, Dipartimento Interateneo Fis M Merlin, CNR, INFM Reg Lab LIT, I-70126 Bari, Italy; Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland (literal)

Titolo

• Influence of InAs, AlAs delta layers on the optical, electronic, and thermal characteristics of strain-compensated GaInAs/AlInAs quantum-cascade lasers (literal)

Abstract

• We extracted the electronic temperatures, the thermal resistance (R-L= 11.5 K/ W), the cross-plane thermal conductivity [k perpendicular to= 2.0 +/- 0.1 W/(Km)], and the thermal boundary resistance [TBR=(4.1-9.3) x 10(-10) K/W m(2)] in strain-compensated Ga0.609In0.391As/ AlIn0.546As0.454 quantum-cascade lasers operating at 4.78 mu m in continuous wave up to 15 degrees C and in pulsed mode up to 40 degrees C. Submonolayer thick InAs and AlAs delta layers are included in the active region to increase the conduction band discontinuity. We found that potential interface broadening caused by the insertion of these delta layers allows for a 43% improvement of the thermal conductivity with respect to conventional lattice-matched GaInAs/ AlInAs heterostructures. (C) 2007 American Institute of Physics. (literal)

Prodotto di

• Materiali magnetici massivi da sistemi nanostrutturati (MD.P04.005.001) (Modulo)
• Sviluppo e applicazioni di sorgenti laser infrarosse a cascata quantica, a fibra ottica e di potenza (MD.P03.011.001) (Modulo)

Autore CNR

• Mauro Giovannini (Persona)
• MIRIAM SERENA VITIELLO (Persona)
• ANTONIA LOPS (Persona)
• VINCENZO SPAGNOLO (Persona)
• GAETANO SCAMARCIO (Persona)

Insieme di parole chiave

• Keywords of "Influence of InAs, AlAs delta layers on the optical, electronic, and thermal characteristics of strain-compensated GaInAs/AlInAs quantum-cascade lasers" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GAETANO SCAMARCIO (Persona)
• ANTONIA LOPS (Persona)
• VINCENZO SPAGNOLO (Persona)
• MIRIAM SERENA VITIELLO (Persona)
• Mauro Giovannini (Persona)

Prodotto

• Sviluppo e applicazioni di sorgenti laser infrarosse a cascata quantica, a fibra ottica e di potenza (MD.P03.011.001) (Modulo)
• Materiali magnetici massivi da sistemi nanostrutturati (MD.P04.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Keywords of "Influence of InAs, AlAs delta layers on the optical, electronic, and thermal characteristics of strain-compensated GaInAs/AlInAs quantum-cascade lasers" (Insieme di parole chiave)