Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Calcagno, L., Zanetti, E., La Via, F., Roccaforte, F., Raineri, V., Libertino, S., Giannazzo, F., Mauceri, M., Musumeci, P. (2002)
  Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem?
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Calcagno, L., Zanetti, E., La Via, F., Roccaforte, F., Raineri, V., Libertino, S., Giannazzo, F., Mauceri, M., Musumeci, P. (literal)

Pagina inizio

• 721 (literal)

Pagina fine

• 724 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 433-4 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Dept Phys, IT-95129 Catania, Italy CNR, IMM, Sez Catania, IT-95121 Catania, Italy (literal)

Titolo

• Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? (literal)

Abstract

• The transition from Schottky to ohmic contact in nickel silicide/SiC system during annealing from 600 to 950 degreesC was investigated by measuring the electrical proprieties of the contact and by analyzing the microstructure of silicide/SiC interface. The graphite clusters formed by carbon atoms during silicidation are uniformly distributed into the silicide layer after annealing at 600 degreesC and they agglomerate into a thin layer far from the silicide/SiC interface after annealing at 950 degreesC. At this temperature an increase of about 0.25 eV of the Schottky barrier height was measured, while Deep Level Transient Spectroscopy evidences an evolution of interfacial defects. The peak related to C-vacancy sited at 0.5 eV from the conduction band has not been observed. This result invalidates the reported literature hypothesis that the formation of ohmic contact after annealing at 950 degreesC was related to the formation of C vacancies. (literal)

Prodotto di

• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)
• FRANCESCO LA VIA (Unità di personale interno)
• FABRIZIO ROCCAFORTE (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem?" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)
• FRANCESCO LA VIA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)

Insieme di parole chiave di

• Keywords of "Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem?" (Insieme di parole chiave)