Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2717018 (literal)

Alternative label

• Vitiello, MS; Scamarcio, G; Spagnolo, V; Lops, A; Yang, QK; Manz, C; Wagner, J (2007)
  Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Vitiello, MS; Scamarcio, G; Spagnolo, V; Lops, A; Yang, QK; Manz, C; Wagner, J (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 90 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Bari, Dipartimento Interateneo Fis M Merlin, CNR, INFM Reg Lab LIT, I-70126 Bari, Italy; Politecn Bari, Dipartimento Interateneo Fis M Merlin, CNR, INFM Reg Lab LIT, I-70126 Bari, Italy; Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany (literal)

Titolo

• Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers (literal)

Abstract

• The authors extracted the thermal resistance (R-L=9.6 K/W) and the electrical power dependence of the electronic temperature (R-e=12.5 K/W) of Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers (QCLs) operating at 4.9 mu m, in the lattice temperature range of 60-90 K. The low electron-lattice coupling constant alpha=10.4 K cm(2)/kA can be related to the beneficial effect of the high conduction band offset, peculiar to the GaInAs/AlGaAsSb material system, on the electron leakage. The authors found an active region cross-plane thermal conductivity value k(perpendicular to)=1.8 +/- 0.1 W/(K m), which is approximately three times larger than that measured in QCLs with GaInAs/AlInAs heterostructures. (c) 2007 American Institute of Physics. (literal)

Prodotto di

• Sviluppo e applicazioni di sorgenti laser infrarosse a cascata quantica, a fibra ottica e di potenza (MD.P03.011.001) (Modulo)

Autore CNR

• VINCENZO SPAGNOLO (Persona)
• GAETANO SCAMARCIO (Persona)
• MIRIAM SERENA VITIELLO (Persona)
• ANTONIA LOPS (Persona)

Insieme di parole chiave

• Keywords of "Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GAETANO SCAMARCIO (Persona)
• ANTONIA LOPS (Persona)
• VINCENZO SPAGNOLO (Persona)
• MIRIAM SERENA VITIELLO (Persona)

Prodotto

• Sviluppo e applicazioni di sorgenti laser infrarosse a cascata quantica, a fibra ottica e di potenza (MD.P03.011.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Keywords of "Experimental investigation of the lattice and electronic temperatures in Ga0.47In0.53As/Al0.62Ga0.38As1-xSbx quantum-cascade lasers" (Insieme di parole chiave)