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Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si (Articolo in rivista)

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Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si (Articolo in rivista) (literal)

Anno

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Alternative label

F. Giannazzo, S. Mirabella, D. De Salvador, E. Napolitani, V. Raineri, A. Carnera, A.V. Drigo, A. Terrasi, F. Priolo (2002)
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si
in Physical review. B, Condensed matter and materials physics
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

F. Giannazzo, S. Mirabella, D. De Salvador, E. Napolitani, V. Raineri, A. Carnera, A.V. Drigo, A. Terrasi, F. Priolo (literal)

Pagina inizio

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Rivista

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Univ Catania, Dept Phys & Astron, I-95125 Catania, Italy Univ Padua, Dept Phys, I-35131 Padua, Italy CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si (literal)

Abstract

The two-dimensional (2D) diffusion of Si self-interstitials (I) from a submicron laterally confined source has been investigated in detail. High-resolution scanning capacitance microscopy was used for quantitative measurements of the B transient enhanced diffusion induced by the I flux generated by a low-energy Si implantation through a submicron dimension oxide mask. We show that the I depth penetration strongly depends on the original lateral size of the source. The 2D I diffusion has been well described by a 2D rate equations model, using the same physical parameters valid for one-dimensional diffusion. (literal)

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