http://www.cnr.it/ontology/cnr/individuo/prodotto/ID209630
Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins (Contributo in atti di convegno)
- Type
- Label
- Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins (Contributo in atti di convegno) (literal)
- Anno
- 2002-01-01T00:00:00+01:00 (literal)
- Alternative label
Vulpio M, Gerardi C, Lombardo S, Ammendola G, Crupi I, Rossetti T, Nastasi N, Mantarro G, Nicotra G (2002)
Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins
in Gettering and Defect Engineering in Semiconductor Technology
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Vulpio M, Gerardi C, Lombardo S, Ammendola G, Crupi I, Rossetti T, Nastasi N, Mantarro G, Nicotra G (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] STMicroelect, Central R&D, IT-95121 Catania, Italy
[ 2 ] CNR, IMETEM, IT-95121 Catania, Italy
[ 3 ] STMicroelect, CFM M5 Operat, IT-95121 Catania, Italy
[ 4 ] Univ Catania, Dept Phys, IT-95129 Catania, Italy (literal)
- Titolo
- Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- Abstract
- We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N-2 carrier gas have been used in the former case, SiH4 and H-2 have been used in the latter, In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 10(11) cm(-2). The process with H-2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H-2 shows better electrical performances. (literal)
- Prodotto di
- Autore CNR
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi