Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins (Contributo in atti di convegno)

Type
Label
  • Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins (Contributo in atti di convegno) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Vulpio M, Gerardi C, Lombardo S, Ammendola G, Crupi I, Rossetti T, Nastasi N, Mantarro G, Nicotra G (2002)
    Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins
    in Gettering and Defect Engineering in Semiconductor Technology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Vulpio M, Gerardi C, Lombardo S, Ammendola G, Crupi I, Rossetti T, Nastasi N, Mantarro G, Nicotra G (literal)
Pagina inizio
  • 663 (literal)
Pagina fine
  • 668 (literal)
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  • 82-84 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] STMicroelect, Central R&D, IT-95121 Catania, Italy [ 2 ] CNR, IMETEM, IT-95121 Catania, Italy [ 3 ] STMicroelect, CFM M5 Operat, IT-95121 Catania, Italy [ 4 ] Univ Catania, Dept Phys, IT-95129 Catania, Italy (literal)
Titolo
  • Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 3-908450-64-0 (literal)
Abstract
  • We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N-2 carrier gas have been used in the former case, SiH4 and H-2 have been used in the latter, In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 10(11) cm(-2). The process with H-2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H-2 shows better electrical performances. (literal)
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