http://www.cnr.it/ontology/cnr/individuo/prodotto/ID209227
Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge Virtual Substrates on Si (Articolo in rivista)
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- Label
- Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge Virtual Substrates on Si (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.apsusc.2012.07.154 (literal)
- Alternative label
C. Frigeri a, S. Bietti b, G. Isella c, S. Sanguinetti b (2013)
Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge Virtual Substrates on Si
in Applied surface science; North Holland Pub. Co., Amsterdam (Paesi Bassi)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- C. Frigeri a, S. Bietti b, G. Isella c, S. Sanguinetti b (literal)
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- http://www.sciencedirect.com/science/article/pii/S0169433212013633 (literal)
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- a CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43100 Parma, Italy; b L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano, Italy; c L-NESS and Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, 22100 Como, Italy (literal)
- Titolo
- Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge Virtual Substrates on Si (literal)
- Abstract
- The structure of self-assembled quantum dots (QDs) grown by Droplet Epitaxy on Ge virtual substrates
has been investigated by TEM. The QDs have a pyramidal shape with base and height of 50 nm. By (0 0 2)
dark field TEM it was seen that the pyramid top is Ga poor and Al rich most likely because of the higher
mobility of Ga along the pyramid sides down to the base. The investigated QDs contain defects identified as
As precipitates by Moirè fringes. The smallest ones (3-5 nm) are coherent with the GaAs lattice suggesting
that they could be a cubic phase of As precipitation. It seems to be a metastable phase since the hexagonal
phase is recovered as the precipitate size increases above ~5 nm. (literal)
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