http://www.cnr.it/ontology/cnr/individuo/prodotto/ID209200
Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing (Articolo in rivista)
- Type
- Label
- Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.apsusc.2012.05.030 (literal)
- Alternative label
C. Frigeri a, M. Serényi b, N. Q. Khánh b, A. Csik c, L. Nasi a, Z. Erdélyi d, D. L. Beke d and H.-G. Boyen e (2013)
Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing
in Applied surface science; North Holland Pub. Co., Amsterdam (Paesi Bassi)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- C. Frigeri a, M. Serényi b, N. Q. Khánh b, A. Csik c, L. Nasi a, Z. Erdélyi d, D. L. Beke d and H.-G. Boyen e (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S0169433212008756 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- a CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43100 Parma, Italy; b Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary; c Institute of Nuclear Research of the Hungarian Academy of Sciences, P.O. Box 51, H-4001 Debrecen, Hungary; d Department of Solid State Physics, University of Debrecen, P.O. Box 2, H-4010 Debrecen, Hungary; e Institute for Materials Research, Hasselt University, Diepenbeek, Belgium (literal)
- Titolo
- Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing (literal)
- Abstract
- The relationship between blistering, H content and de-passivation of the dangling bonds has been studied
in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements
have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations
on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed
SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from
Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing. (literal)
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