Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing (Articolo in rivista)

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  • Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.apsusc.2012.05.030 (literal)
Alternative label
  • C. Frigeri a, M. Serényi b, N. Q. Khánh b, A. Csik c, L. Nasi a, Z. Erdélyi d, D. L. Beke d and H.-G. Boyen e (2013)
    Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing
    in Applied surface science; North Holland Pub. Co., Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Frigeri a, M. Serényi b, N. Q. Khánh b, A. Csik c, L. Nasi a, Z. Erdélyi d, D. L. Beke d and H.-G. Boyen e (literal)
Pagina inizio
  • 30 (literal)
Pagina fine
  • 34 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0169433212008756 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 267 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43100 Parma, Italy; b Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary; c Institute of Nuclear Research of the Hungarian Academy of Sciences, P.O. Box 51, H-4001 Debrecen, Hungary; d Department of Solid State Physics, University of Debrecen, P.O. Box 2, H-4010 Debrecen, Hungary; e Institute for Materials Research, Hasselt University, Diepenbeek, Belgium (literal)
Titolo
  • Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing (literal)
Abstract
  • The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing. (literal)
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