Role of self-interstitials on B diffusion in Ge (Articolo in rivista)

Type
Label
  • Role of self-interstitials on B diffusion in Ge (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nimb.2011.08.041 (literal)
Alternative label
  • Scapellato GG, Bruno E, Smith AJ, Napolitani E, De Salvador D, Mirabella S, Mastromatteo M, Carnera A, Gwilliam R, Priolo F (2012)
    Role of self-interstitials on B diffusion in Ge
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Scapellato GG, Bruno E, Smith AJ, Napolitani E, De Salvador D, Mirabella S, Mastromatteo M, Carnera A, Gwilliam R, Priolo F (literal)
Pagina inizio
  • 8 (literal)
Pagina fine
  • 11 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0168583X11008329 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 282 (literal)
Rivista
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  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Catania, MATIS IMM CNR, Dipartimento Fis & Astron, I-95123 Catania, Italy [ 2 ] Univ Padua, Dipartimento Fis, MATIS IMM CNR, I-35131 Padua, Italy [ 3 ] Univ Surrey, Ion Beam Ctr, Guildford GU2 7XH, Surrey, England (literal)
Titolo
  • Role of self-interstitials on B diffusion in Ge (literal)
Abstract
  • B diffusion in crystalline Ge is investigated under equilibrium and non-equilibrium conditions in a large temperature range (200-800 degrees C), in order to discriminate the role of self-interstitials (Is) and the energy barriers involved in the microscopic mechanism of B migration. To this aim, we copiously furnished Is by 200 or 300 key H+ irradiation, and performed a direct comparison with B diffusion in thermal conditions at the same temperature (T). The diffused profiles of B were simulated assuming the kick-out model, and the extracted parameters (migration length, lambda, and formation rate of mobile B, g) indicated that the B diffusion is always mediated by Is showing different features at low and high T regimes. For T lower than 600 degrees C the thermal generation of Is is negligible and the only barrier to g (measured to be similar to 0.1 eV) is due to the Is migration and B mobile formation. At T higher than 600 degrees C, the thermal generation of Is starts to overcome the Is supply from the irradiation, and the activation energy of g increases to 3.0-3.5 eV. The migration length in the low-T regime has the largest value (similar to 20 nm), while it decreases down to 1-2 nm by increasing T, showing a negative activation energy of similar to-0.64 eV, compatible with a dissociation process which stops the diffusion event. In this regard, we observed that the mobile B migration length depends only on T, regardless of the point defects concentration. These results and the energy barriers measurements contribute to a further comprehension of the B diffusion and point defects in crystalline Ge. (literal)
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