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SiC(100) ordered film growth by C-60 decomposition on Si(100) surfaces (Articolo in rivista)

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SiC(100) ordered film growth by C-60 decomposition on Si(100) surfaces (Articolo in rivista) (literal)

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P. Moras a,d, N. Mahne a,d, L. Ferrari a, A. Pesci a, M. Capozi a, L. Aversa b, S.N. Jha c, R. Verucchi b, S. Iannotta b, M. Pedio a (2001)
SiC(100) ordered film growth by C-60 decomposition on Si(100) surfaces
in Applied surface science; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
(literal)

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P. Moras a,d, N. Mahne a,d, L. Ferrari a, A. Pesci a, M. Capozi a, L. Aversa b, S.N. Jha c, R. Verucchi b, S. Iannotta b, M. Pedio a (literal)

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Conference: Spring Meeting of the European-Materials-Research-Society Location: STRASBOURG, FRANCE Date: JUN 05-08, 2001 Sponsor(s): European Mat Res Soc (literal)

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a ISM-CNR, Sede di Trieste, Area Science Park, Basovizza 34012, Trieste, Italy; b CeFSA Centro CNR-ITC per la Fisica degli Stati Aggregati, Via Sommarive 18, Povo 38050, Trento, Italy; c Spectroscopy Division BARC, Mumbai 400 085, India; d Dipartimento di Fisica, Universita' degli Studi di Trieste, 34100 Trieste, Italy (literal)

Titolo

SiC(100) ordered film growth by C-60 decomposition on Si(100) surfaces (literal)

Abstract

Fullerene (C-60) was deposited on Si(1 0 0) 2 x 1 double domain reconstructed substrate. The interface has been treated with annealing procedure in order to fragment the C-60 precursor and to induce covalent Si-C bond formation and to obtain carbidization. In this way SiC(1 0 0) films of thousands of Angstrom have been grown. Depending on the growth procedure different surface structures, 1 x 1 or 2 x 1, have been obtained. The different stages of growth has been checked by in situ low energy electron diffraction (LEED), and Auger spectroscopy. Ex situ we verified surface order by means of LEED technique, observing either a 1 x 1 or a 2 x 1 double domain reconstruction. We characterized electronic properties collecting valence band and core level spectra employing synchrotron radiation source. Valence band spectra showed evident electronic surface states similar to those revealed on SiC(1 0 0) surfaces grown by different techniques. (literal)

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