http://www.cnr.it/ontology/cnr/individuo/prodotto/ID208178

Optimizing picene molecular assembling by supersonic molecular beam deposition (Articolo in rivista)

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Optimizing picene molecular assembling by supersonic molecular beam deposition (Articolo in rivista) (literal)

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Stefano Gottardi 1, Tullio Toccoli 1, Salvatore Iannotta 1, Paolo Bettotti 2, Antonio Cassinese 3,4, Mario Barra 3,4, Laura Ricciotti 5, Yoshihiro Kubozono 6 (2012)
Optimizing picene molecular assembling by supersonic molecular beam deposition
in Journal of physical chemistry. C; American Chemical Society, Washington (Stati Uniti d'America)
(literal)

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Stefano Gottardi 1, Tullio Toccoli 1, Salvatore Iannotta 1, Paolo Bettotti 2, Antonio Cassinese 3,4, Mario Barra 3,4, Laura Ricciotti 5, Yoshihiro Kubozono 6 (literal)

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1 IMEM CNR FBK Div Trento, I-38123 Povo, Italy; 2 Univ Trent, Nanosci Lab, Dept Phys, I-38123 Povo, Italy; 3 Univ Naples Federico II, CNR SPIN, I-80125 Naples, Italy; 4 Univ Naples Federico II, Dept Phys Sci, I-80125 Naples, Italy; 5 Univ Naples Federico II, Dept Chem, I-80126 Naples, Italy; 6 Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan (literal)

Titolo

Optimizing picene molecular assembling by supersonic molecular beam deposition (literal)

Abstract

Here we report an investigation of the growth of picene by supersonic molecular beam deposition on thermal silicon oxide and on a self-assembled monolayer of hexamethyldisiloxane (HMDS). In both cases film morphology shows a structure with very sharp island edges and well-separated islands which size and height depend on the deposition conditions. Picene films growth on bare silicon covered with hydrophobic HDMS shows islands characterized by large regular crystallites of several micrometers; on the other hand, films growth on silicon oxide shows smaller and thicker islands. We analyzed the details of the growth model and describe it as a balancing mechanism involving the weak interaction between molecules and surface and the strong picene-picene interaction that leads to a different Schwoebel-Ehrlich barrier in the first layer with respect to the successive one Finally, we study. the charge transport properties of these films by fabricating field-effect transistors devices in both top and bottom contact configuration. We notice that substrate influences the electrical properties of the device and we obtained a maximum mobility value of 1.2 cm(2) V-1 s(-1) measured on top contact devices in air. (literal)

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