http://www.cnr.it/ontology/cnr/individuo/prodotto/ID207952
Influence of substrate dielectric permittivity on local capacitive behavior in graphene (Articolo in rivista)
- Type
- Label
- Influence of substrate dielectric permittivity on local capacitive behavior in graphene (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.physe.2011.01.019 (literal)
- Alternative label
Sonde S, Vecchio C, Giannazzo F, Lo Nigro R, Raineri V, Rimini E (2012)
Influence of substrate dielectric permittivity on local capacitive behavior in graphene
in Physica. E, Low-dimensional systems and nanostructures (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Sonde S, Vecchio C, Giannazzo F, Lo Nigro R, Raineri V, Rimini E (literal)
- Pagina inizio
- Pagina fine
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- http://www.sciencedirect.com/science/article/pii/S1386947711000348 (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] CNR IMM, I-95121 Catania, Italy
[ 2 ] Scuola Super Catania, I-95123 Catania, Italy
[ 3 ] Univ Catania, Dipartmento Fis & Astron, I-95123 Catania, Italy (literal)
- Titolo
- Influence of substrate dielectric permittivity on local capacitive behavior in graphene (literal)
- Abstract
- Graphene deposited on silicon dioxide (DG-SiO2) and high-kappa dielectric strontium titanate (DG-STO) are investigated for electrostatic properties by local capacitance measurements carried out with Scanning Capacitance Spectroscopy (SCS). The quantum capacitance associated with 2DEG in graphene showed significant increase for DG-STO as a function of Fermi level (E-F) as compared to that for DG-SiO2. The quantum capacitance, being a fundamental property of graphene 2DEG, is not expected to vary with substrate dielectric properties in the absence of any interaction. However, the observed increase in quantum capacitance in our case is predominantly due to the enhanced effectively biased area in DG-STO. We suggest that this effect is a consequence of better dielectric screening of commonly observed charged impurities, on graphene and/or at the graphene/substrate interface, by the use of high permittivity substrate. (literal)
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