Flexible PVDF-TrFE pyroelectric sensor driven by polysilicon thin film transistor fabricated on ultra-thin polyimide substrate (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Flexible PVDF-TrFE pyroelectric sensor driven by polysilicon thin film transistor fabricated on ultra-thin polyimide substrate (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.sna.2012.07.013 (literal)

Alternative label

• Pecora A, Maiolo L, Maita F, Minotti A (2012)
  Flexible PVDF-TrFE pyroelectric sensor driven by polysilicon thin film transistor fabricated on ultra-thin polyimide substrate
  in Sensors and actuators. A, Physical (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Pecora A, Maiolo L, Maita F, Minotti A (literal)

Pagina inizio

• 39 (literal)

Pagina fine

• 43 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.sciencedirect.com/science/article/pii/S0924424712004529 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 185 (literal)

Rivista

• Sensors and actuators. A, Physical (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] CNR IMM, I-00133 Rome, Italy (literal)

Titolo

• Flexible PVDF-TrFE pyroelectric sensor driven by polysilicon thin film transistor fabricated on ultra-thin polyimide substrate (literal)

Abstract

• In this work we present a flexible pyroelectric sensor composed by a PVDF-TrFE capacitor realized on ultra-thin polyimide film (5 mu m thick), integrated with a n-channel low temperature polysilicon thin film transistor also fabricated on ultra-thin polyimide (8 mu m thick). Exploiting a multi-foil approach, the pyroelectric capacitors and the transistors were attached one over the other reaching a final thickness of about 15 mu m. The bottom contact of the sensor capacitance was connected to the gate of the transistor by a silver ink, while, for bias and load resistances, we used external elements. The active sensor area was defined by a circular capacitor with a diameter of about 2 mm. In order to enhance PVDF-TrFE pyroelectric properties, an external stepwise voltage was applied to the structure up to values of 160 V at a temperature of about 80 degrees C. The devices were then tested, at different working frequencies (up to 800 Hz) under a specific infrared radiation provided by a He-Ne laser, with a wavelength of 632 nm and maximum power of 5 mW. An output signal of tens of millivolt was observed at 10 Hz, exploiting the pre-amplification of polysilicon thin film transistor. (literal)

Prodotto di

• Dispositivi per elettronica di larga area (MD.P05.001.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• LUCA MAIOLO (Unità di personale interno)
• ALESSANDRO PECORA (Persona)
• ANTONIO MINOTTI (Persona)
• FRANCESCO MAITA (Persona)

Insieme di parole chiave

• Parole chiave di "Flexible PVDF-TrFE pyroelectric sensor driven by polysilicon thin film transistor fabricated on ultra-thin polyimide substrate" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ALESSANDRO PECORA (Persona)
• ANTONIO MINOTTI (Persona)
• FRANCESCO MAITA (Persona)
• LUCA MAIOLO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Dispositivi per elettronica di larga area (MD.P05.001.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Sensors and actuators. A, Physical (Rivista)

Insieme di parole chiave di

• Parole chiave di "Flexible PVDF-TrFE pyroelectric sensor driven by polysilicon thin film transistor fabricated on ultra-thin polyimide substrate" (Insieme di parole chiave)