Plasma plume effects on the conductivity of amorphous-LaAlO3/SrTiO3 interfaces grown by pulsed laser deposition in O-2 and Ar (Articolo in rivista)

Type
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  • Plasma plume effects on the conductivity of amorphous-LaAlO3/SrTiO3 interfaces grown by pulsed laser deposition in O-2 and Ar (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Alternative label
  • A. Sambri1, D. V. Cristensen2, F. Trier2, Y. Z. Chen2, S. Amoruso1, N. Pryds2, R. Bruzzese1, and X. Wang1 (2012)
    Plasma plume effects on the conductivity of amorphous-LaAlO3/SrTiO3 interfaces grown by pulsed laser deposition in O-2 and Ar
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Sambri1, D. V. Cristensen2, F. Trier2, Y. Z. Chen2, S. Amoruso1, N. Pryds2, R. Bruzzese1, and X. Wang1 (literal)
Pagina inizio
  • 231605 (literal)
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  • http://dx.doi.org/10.1063/1.4727905 (literal)
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  • 100 (literal)
Rivista
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  • 4 (literal)
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  • 23 (literal)
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  • 1CNR-SPIN and Dipartimento di Scienze Fisiche, Complesso Universitario di Monte Sant'Angelo, Via Cintia, I-80125 Napoli, Italy 2Department of Energy Conversion and Storage, Risø Campus, Technical University of Denmark, DK-4000 Roskilde, Denmark (literal)
Titolo
  • Plasma plume effects on the conductivity of amorphous-LaAlO3/SrTiO3 interfaces grown by pulsed laser deposition in O-2 and Ar (literal)
Abstract
  • Amorphous-LaAlO3/SrTiO3 interfaces exhibit metallic conductivity similar to those found for the extensively studied crystalline-LaAlO3/SrTiO3 interfaces. Here, we investigate the conductivity of the amorphous-LaAlO3/SrTiO3 interfaces grown in different pressures of O2 and Ar background gases. During the deposition, the LaAlO3 ablation plume is also studied, in situ, by fast photography and space-resolved optical emission spectroscopy. An interesting correlation between interfacial conductivity and kinetic energy of the Al atoms in the plume is observed: to assure conducting interfaces of amorphous-LaAlO3/SrTiO3, the kinetic energy of Al should be higher than 1 eV. Our findings add further insights on mechanisms leading to interfacial conductivity in SrTiO3-based oxide heterostructures. (literal)
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