Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene (Articolo in rivista)

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Label
  • Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.physe.2011.01.002 (literal)
Alternative label
  • Sonde S, Vecchio C, Giannazzo F, Yakimova R, Raineri V, Rimini E (2012)
    Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene
    in Physica. E, Low-dimensional systems and nanostructures (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sonde S, Vecchio C, Giannazzo F, Yakimova R, Raineri V, Rimini E (literal)
Pagina inizio
  • 93 (literal)
Pagina fine
  • 96 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S1386947711000038 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 44 (literal)
Rivista
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  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] CNR IMM, I-95121 Catania, Italy [ 2 ] Scuola Super Catania, I-95123 Catania, Italy [ 3 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy [ 4 ] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden (literal)
Titolo
  • Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene (literal)
Abstract
  • Electrostatic properties, quantum capacitance (C-q) and local density of states (LDOS) are evaluated for graphene on 4H-SiC(0 0 0 1) by measuring the local capacitance with Scanning Capacitance Spectroscopy (SCS). Two distinct samples were used for comparative study, viz., graphene exfoliated and deposited on 4H-SiC(0 0 0 1)-DG, and graphene grown epitaxially on 4H-SiC(0 0 0 1)-EG. We observed a distinctly lower screening length (r(scr)) and C-q while wider variations in the LDOS for EG. Such differences are attributed to the peculiar interface between EG/4H-SiC(0 0 0 1), which is known to be more or less defective having the presence of positive charges. (literal)
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