Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/jp3042318 (literal)

Alternative label

• Grazianetti C, Molle A, Tallarida G, Spiga S, Fanciulli M (2012)
  Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces
  in Journal of physical chemistry. C
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Grazianetti C, Molle A, Tallarida G, Spiga S, Fanciulli M (literal)

Pagina inizio

• 18746 (literal)

Pagina fine

• 18751 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 116 (literal)

Rivista

• Journal of physical chemistry. C (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 35 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy [ 2 ] Univ Milano Bicocca, Dipartimento Sci Mat, I-20126 Milan, Italy (literal)

Titolo

• Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces (literal)

Abstract

• The role played by electric dipoles at the interface Al2O3/In0.53Ga0.47As(001) has been investigated in a whole in situ approach by means of scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy (XPS) in order to study local and macroscopic features, respectively. The initial pinned Fermi level (FL) shifts toward midgap after oxide deposition in both (2 x 4) and (4 x 2) reconstructions, while a reconstruction-dependent FL restoring is observed after annealing at 200 degrees C. This behavior is rationalized in terms of formation and suppression of positive charge in the as-grown oxide resulting from in situ XPS of the interface band line up. (literal)

Prodotto di

• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)

Autore CNR

• ALESSANDRO MOLLE (Persona)
• GRAZIELLA TALLARIDA (Persona)
• SABINA SPIGA (Persona)
• MARCO FANCIULLI (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• ALESSANDRO MOLLE (Persona)
• GRAZIELLA TALLARIDA (Persona)
• MARCO FANCIULLI (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)
• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of physical chemistry. C (Rivista)

Insieme di parole chiave di

• Keywords of "Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces" (Insieme di parole chiave)