Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx (Articolo in rivista)

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  • Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4752464 (literal)
Alternative label
  • Frabboni S, Grillo V, Gazzadi GC, Balboni R, Trotta R, Polimeni A, Capizzi M, Martelli F, Rubini S, Guzzinati G, Glas F (2012)
    Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Frabboni S, Grillo V, Gazzadi GC, Balboni R, Trotta R, Polimeni A, Capizzi M, Martelli F, Rubini S, Guzzinati G, Glas F (literal)
Pagina inizio
  • 111912-1 (literal)
Pagina fine
  • 111912-4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apl.aip.org/resource/1/applab/v101/i11/p111912_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 101 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41125 Modena, Italy [ 2 ] CNR, Ist Nanosci Modena S3, I-41125 Modena, Italy [ 3 ] CNR, IMM Bologna, I-40129 Bologna, Italy [ 4 ] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy [ 5 ] IOM CNR, I-34012 Trieste, Italy [ 6 ] IMM CNR, I-00133 Rome, Italy [ 7 ] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium [ 8 ] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France (literal)
Titolo
  • Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx (literal)
Abstract
  • Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed. (literal)
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