Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0268-1242/27/7/074013 (literal)

Alternative label

• Wiemer C, Lamagna L, Fanciulli M (2012)
  Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications
  in Semiconductor science and technology (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Wiemer C, Lamagna L, Fanciulli M (literal)

Pagina inizio

• 074013 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scienceserver.cilea.it/pdflinks/13020612154823771.pdf (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 27 (literal)

Rivista

• Semiconductor science and technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 12 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 7 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [1 ] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy [ 2 ] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy (literal)

Titolo

• Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications (literal)

Abstract

• Atomic layer deposition (ALD) has been established as a powerful method for the growth of very thin and conformal films to be used in ultra-scaled conventional and novel microelectronic devices. We report the most recent advancements in the field of ALD of rare-earth-based oxides to be implemented as active dielectrics. The review is balanced between the development of new ALD processes and the assessment and the discussion of fundamental scientific issues related to the structural, chemical and electrical properties of thin films of rare-earth-based oxides. The deposition process of binary lanthanide oxides is critically reviewed focusing on the first (La) and last (Lu) element of the series. Concomitantly, the integration of rare earth elements as dopant atoms in HfO2 and ZrO2 is also systematically reported. A final overview is dedicated to the results obtained by ALD of more innovative lanthanum-based ternary oxides. (literal)

Prodotto di

• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CLAUDIA WIEMER (Unità di personale interno)
• MARCO FANCIULLI (Unità di personale esterno)
• LUCA LAMAGNA (Persona)

Insieme di parole chiave

• Keywords of "Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• CLAUDIA WIEMER (Unità di personale interno)
• MARCO FANCIULLI (Unità di personale esterno)
• LUCA LAMAGNA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Semiconductor science and technology (Rivista)

Insieme di parole chiave di

• Keywords of "Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications" (Insieme di parole chiave)