Anomalous transport of Sb in laser irradiated Ge (Articolo in rivista)

Type
Label
  • Anomalous transport of Sb in laser irradiated Ge (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4764069 (literal)
Alternative label
  • Bruno E, Scapellato GG, La Magna A, Cuscuna M, Napolitani E, Boninelli S, Priolo F, Fortunato G, Privitera V (2012)
    Anomalous transport of Sb in laser irradiated Ge
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bruno E, Scapellato GG, La Magna A, Cuscuna M, Napolitani E, Boninelli S, Priolo F, Fortunato G, Privitera V (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apl.aip.org/resource/1/applab/v101/i17/p172110_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 101 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 17 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Catania, MATIS IMM CNR, I-95123 Catania, Italy [ 2 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy [ 3 ] CNR IMM, I-95121 Catania, Italy [ 4 ] CNR IMM, I-00133 Rome, Italy [ 5 ] Univ Padua, MATIS IMM CNR, I-35131 Padua, Italy [ 6 ] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy (literal)
Titolo
  • Anomalous transport of Sb in laser irradiated Ge (literal)
Abstract
  • Excimer laser annealing is shown to be very promising to promote Sb incorporation in Ge up to concentrations as high as 1 x 10(21) at./cm(3). However, we demonstrate that when Ge is melted by laser irradiation, a high excess of vacancies is generated in the molten region. These vacancies induce Sb electrical deactivation at the melt depth through the formation of Sb-m-V-n complexes that act as a sink for further Sb atoms, even leading Sb to back-diffuse towards the surface, against the concentration gradient. These results are fundamental for the realization of new generation Ge-based micro and optoelectronic devices. (literal)
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