Molecular beam epitaxy: fundamentals, historical background and future prospects (Contributo in volume (capitolo o saggio))

Type

• Contributo in volume (capitolo o saggio) (Classe)
• Prodotto della ricerca (Classe)

Label

• Molecular beam epitaxy: fundamentals, historical background and future prospects (Contributo in volume (capitolo o saggio)) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/B978-0-12-387839-7.00001-4 (literal)

Alternative label

• Franchi Secondo (2013)
  Molecular beam epitaxy: fundamentals, historical background and future prospects
  Elsevier Inc., San Diego (Stati Uniti d'America) in Molecular Beam Epitaxy: From research to mass production, 2013
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Franchi Secondo (literal)

Pagina inizio

• 1 (literal)

Pagina fine

• 46 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://dx.doi.org/10.1016/B978-0-12-387839-7.00001-4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Molecular Beam Epitaxy: From research to mass production (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 46 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMEM Institute, Parma, Italy (literal)

Titolo

• Molecular beam epitaxy: fundamentals, historical background and future prospects (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-0-12-387839-7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Henini Mohamed (literal)

Abstract

• Molecular beam epitaxy (MBE) is an epitaxial technology particularly suited for the preparation of advanced materials, structures and nanostructures. MBE is characterised by specific two- and three-dimensional growth mechanisms, the occurrence of which can be selected according to the value of lattice mismatch between substrate and epitaxial deposit; the two mechanisms allow for the growth of structures either with interfaces smooth on the atomic scale or with self-assembled nanoisland, where carriers can be two- or three-dimensionally quantum confined, respectively. MBE demonstrated most of the structures where quantum confinement of carriers results in innovative properties, which can be adroitly engineered for both fundamental studies and technological applications. A number of researches, which were awarded Nobel prizes, were directly related to achievements of MBE, which allowed for design and preparation of the new structures. MBE also evolved into a production technology, by which a number of advanced devices can be mass-produced. (literal)

Editore

• Elsevier Inc. (Editore)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Preparazione e caratterizzazione di nanostrutture per fotonica (MD.P03.004.001) (Modulo)

Autore CNR

• SECONDO FRANCHI (Persona)

Insieme di parole chiave

• Keywords of "Molecular beam epitaxy: fundamentals, historical background and future prospects" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Preparazione e caratterizzazione di nanostrutture per fotonica (MD.P03.004.001) (Modulo)

Autore CNR di

• SECONDO FRANCHI (Persona)

Editore di

• Elsevier Inc. (Editore)

Insieme di parole chiave di

• Keywords of "Molecular beam epitaxy: fundamentals, historical background and future prospects" (Insieme di parole chiave)