Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation (Articolo in rivista)

Type
Label
  • Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2713347 (literal)
Alternative label
  • Raino, G; Visimberga, G; Salhi, A; De Vittorio, M; Passaseo, A; Cingolani, R; De Giorgi, M (2007)
    Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Raino, G; Visimberga, G; Salhi, A; De Vittorio, M; Passaseo, A; Cingolani, R; De Giorgi, M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 90 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • ISUFI, INFM, CNR, Natl Nanotechnol Lab, I-73100 Lecce, Italy (literal)
Titolo
  • Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation (literal)
Abstract
  • The authors have performed time resolved photoluminescence measurements by upconversion technique on InAs quantum dots embedded in an InGaAs/GaAs quantum well emitting at 1.3 mu m at room temperature. A detailed analysis of the photoluminescence transients as a function of the excitation density and for different detection energies between the quantum dot transitions and the GaAs absorption edge shows that the intradot relaxation is slower than the direct carrier capture from the barrier states through a continuum background relaxation. (c) 2007 American Institute of Physics. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it