Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications (Articolo in rivista)

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  • Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jcrysgro.2010.10.112 (literal)
Alternative label
  • Bosi, Matteo, Attolini, Giovanni, Calicchio, Marco, Ferrari, Claudio, Frigeri, Cesare, Gombia, Enos, Motta, Alberto, Rossi, Francesca (2011)
    Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications
    in Journal of crystal growth; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bosi, Matteo, Attolini, Giovanni, Calicchio, Marco, Ferrari, Claudio, Frigeri, Cesare, Gombia, Enos, Motta, Alberto, Rossi, Francesca (literal)
Pagina inizio
  • 341 (literal)
Pagina fine
  • 344 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • The 16th International Conference on Crystal Growth (ICG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14) - 8-13 August, 2010, Beijn, China ID_PUMA: cnr.imem/2011-A0-057 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0022024810008602# (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 318 (literal)
Rivista
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  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMEM CNR Inst, I-43124 Parma, Italy (literal)
Titolo
  • Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications (literal)
Abstract
  • In the present work homoepitaxial Ge layers were deposited by means of metal organic vapor phase epitaxy (MOVPE) on Ge using iso-butyl germane (iBuGe) as ametal organic precursor. Layers of different thicknesses were grown by varying the deposition temperature between 550 and 700 1C on n- and p-type Ge substrates. The films were found to be intrinsically p-type with high carrier concentration, but using AsH3 it was possible to achieve n-type doping. TEM and X-ray diffraction were used to assess the good crystallographic quality of the layers. By depositing a p-type layer onto an n-type Ge substrate or, vice versa, an n-type layer on a p-type Ge substrate is was possible to realize p/n (or n/p) junctions. Mesa structures were realized in order to perform electrical characterizations of the junctions. (literal)
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