Frequency-noise dynamics of mid-infrared quantum cascade lasers (Articolo in rivista)

Type
Label
  • Frequency-noise dynamics of mid-infrared quantum cascade lasers (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/JQE.2011.2147760 (literal)
Alternative label
  • Borri Simone [ 1,2 ] ; Bartalini Saverio [ 1,2 ] ; Cancio Pastor Pablo [ 1,2 ] ; Galli Iacopo [ 1,2 ] ; Giusfredi Giovanni [ 1,2 ] ; Mazzotti Davide [ 1,2 ] ; Yamanishi Masamichi [ 3 ] ; De Natale Paolo [ 1,2 ] (2011)
    Frequency-noise dynamics of mid-infrared quantum cascade lasers
    in IEEE journal of quantum electronics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Borri Simone [ 1,2 ] ; Bartalini Saverio [ 1,2 ] ; Cancio Pastor Pablo [ 1,2 ] ; Galli Iacopo [ 1,2 ] ; Giusfredi Giovanni [ 1,2 ] ; Mazzotti Davide [ 1,2 ] ; Yamanishi Masamichi [ 3 ] ; De Natale Paolo [ 1,2 ] (literal)
Pagina inizio
  • 984 (literal)
Pagina fine
  • 988 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 47 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Ist Nazl Ottica, Consiglio Nazl Ric, I-50125 Florence, Italy [ 2 ] European Lab Nonlinear Spect, I-50019 Sesto Fiorentino, Italy [ 3 ] Hamamatsu Photon KK, Cent Res Labs, Hamamatsu, Shizuoka 4348601, Japan (literal)
Titolo
  • Frequency-noise dynamics of mid-infrared quantum cascade lasers (literal)
Abstract
  • By measuring the frequency-noise power spectral density of a cryogenically-cooled mid-infrared quantum cascade laser, we investigate the different contributions to the noise spectrum and identify the main differences with respect to standard bipolar semiconductor devices. In particular, the existence of a thermal cut-off on the 1/f noise allows to identify the current fluctuations through the heterostructure as the physical mechanism, intrinsic to the device, at the basis of the measured flicker noise. This result, marking the difference with bipolar semiconductor devices, is confirmed analyzing the laser frequency response to a modulation of the driving current. (literal)
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