MBE growth and properties of low-density InAs/GaAs quantum dot structures (Articolo in rivista)

Type
Label
  • MBE growth and properties of low-density InAs/GaAs quantum dot structures (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/crat.201000622 (literal)
Alternative label
  • Trevisi, Giovanna 1, Seravalli, Luca 1, Frigeri, Paola 1, Bocchi, Claudio 1, Grillo, Vincenzo 1,3, Nasi, Lucia 1, Suarez, Isaac 2, Rivas, David 2, Munoz-Matutano, Guillermo 2, Martinez-Pastor, Juan 2 (2011)
    MBE growth and properties of low-density InAs/GaAs quantum dot structures
    in Crystal research and technology (1981); WILEY-BLACKWELL, MALDEN 02148,MA (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Trevisi, Giovanna 1, Seravalli, Luca 1, Frigeri, Paola 1, Bocchi, Claudio 1, Grillo, Vincenzo 1,3, Nasi, Lucia 1, Suarez, Isaac 2, Rivas, David 2, Munoz-Matutano, Guillermo 2, Martinez-Pastor, Juan 2 (literal)
Pagina inizio
  • 801 (literal)
Pagina fine
  • 804 (literal)
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  • ID_PUMA: cnr.imem/2011-A0-038 (literal)
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  • http://onlinelibrary.wiley.com/doi/10.1002/crat.201000622/abstract (literal)
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  • 46 (literal)
Rivista
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  • 4 (literal)
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  • 8 (literal)
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  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] CNR IMEM Inst, I-43124 Parma, Italy; [ 2 ] Univ Valencia, Inst Ciencia Mat, UMDO, Unidad Asociada,CSIC IMM, Valencia 4607, Spain; [ 3 ] CNR Ist Nanosci S3, I-41125 Modena, Italy (literal)
Titolo
  • MBE growth and properties of low-density InAs/GaAs quantum dot structures (literal)
Abstract
  • We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaAs upper confining layers. Owing to these particular design and growth parameters, quantum dot densities are in the order of 45x10(9) cm(-2) with emission wavelengths ranging from 1.20 to 1.33 mu m at 10 K, features that make these structures interesting for single-photon operation at telecom wavelength. High resolution structural techniques show that In content and composition profiles in the structures depend on the particular epitaxial growth conditions used to reduce the density of quantum dots. Carrier recombination dynamics in quantum dots is studied by analysing the integrated photoluminescence (PL) intensity and recombination times as functions of the temperature. Arrhenius plots of the integrated PL show two activation energies implying two decay processes. The first one is associated to thermal escape of carriers from quantum dot to wetting layer states; the second one is consistent with the thermal population of quantum dot dark states, as suggested by time resolved PL measurements. (literal)
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