Comment on \"Electronic Structure of Superconducting KC8 and Nonsuperconducting LiC6 Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State'' (Articolo in rivista)

Type
Label
  • Comment on \"Electronic Structure of Superconducting KC8 and Nonsuperconducting LiC6 Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State'' (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevLett.108.149701 (literal)
Alternative label
  • M. Calandra1, C. Attaccalite2, G. Profeta3, and F. Mauri1 (2012)
    Comment on "Electronic Structure of Superconducting KC8 and Nonsuperconducting LiC6 Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State''
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Calandra1, C. Attaccalite2, G. Profeta3, and F. Mauri1 (literal)
Pagina inizio
  • 149701/1 (literal)
Pagina fine
  • 149701/2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://link.aps.org/doi/10.1103/PhysRevLett.108.149701 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 108 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 14 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1IMPMC, Université Paris 6, CNRS, 4 Place Jussieu, 7504 Paris, France 2Institut Neel, CNRS/UJF, 25 rue des Martyrs BP 166, Batiment D, F-38042 Grenoble cedex 9, France 3SPIN-CNR--Dipartmento di Fisica, Università degli Studi di L'Aquila, 67100 L'Aquila, Italy (literal)
Titolo
  • Comment on \"Electronic Structure of Superconducting KC8 and Nonsuperconducting LiC6 Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State'' (literal)
Abstract
  • The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the interface coupling is dominant for the activated high-T contribution of localized polarons. In order to improve the description of the transport properties, the presence of disorder is needed in addition to electron-phonon couplings. The effects of a weak disorder largely increase the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant window 150 K < T < 300 K. The results are discussed in connection with experimental data of rubrene organic field-effect transistors. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it