http://www.cnr.it/ontology/cnr/individuo/prodotto/ID204474
Interplay between electron-phonon coupling and disorder strength on the transport properties of organic semiconductors (Articolo in rivista)
- Type
- Label
- Interplay between electron-phonon coupling and disorder strength on the transport properties of organic semiconductors (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevB.85.155205 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- C. A. Perroni and V. Cataudella (literal)
- Pagina inizio
- Pagina fine
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- http://link.aps.org/doi/10.1103/PhysRevB.85.155205 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
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- CNR-SPIN and Dipartimento di Scienze Fisiche, Università di Napoli \"Federico II\", I-80126 Napoli, Italy (literal)
- Titolo
- Interplay between electron-phonon coupling and disorder strength on the transport properties of organic semiconductors (literal)
- Abstract
- The combined effect of bulk and interface electron-phonon couplings on the transport properties is investigated in a model for organic semiconductors gated with polarizable dielectrics. While the bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the interface coupling is dominant for the activated high-T contribution of localized polarons. In order to improve the description of the transport properties, the presence of disorder is needed in addition to electron-phonon couplings. The effects of a weak disorder largely increase the activation energies of mobility and induce the small polaron formation at lower values of electron-phonon couplings in the experimentally relevant window 150 K
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- Autore CNR
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