Photodoping and in-gap interface states across the metal-insulator transition in LaAlO3/SrTiO3 heterostructures (Articolo in rivista)

Type
Label
  • Photodoping and in-gap interface states across the metal-insulator transition in LaAlO3/SrTiO3 heterostructures (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.86.045127 (literal)
Alternative label
  • Z. Ristic 1,2, R. Di Capua 1,3, F. Chiarella 1, G. M. De Luca 1, I. Maggio-Aprile 2, M. Radovic 4, and M. Salluzzo 1,* (2012)
    Photodoping and in-gap interface states across the metal-insulator transition in LaAlO3/SrTiO3 heterostructures
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Z. Ristic 1,2, R. Di Capua 1,3, F. Chiarella 1, G. M. De Luca 1, I. Maggio-Aprile 2, M. Radovic 4, and M. Salluzzo 1,* (literal)
Pagina inizio
  • 045127-1 (literal)
Pagina fine
  • 045127-4 (literal)
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  • http://link.aps.org/doi/10.1103/PhysRevB.86.045127 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 86 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
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  • 1CNR-SPIN, Complesso MonteSantangelo via Cinthia, I-80126 Napoli, Italy 2Departement de Physique de la Matiere Condensee, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland 3Dipartimento Scienze per la Salute, Universit√† del Molise, Via De Sanctis, I-86100 Campobasso, Italy 4LSNS - EPFL, PH A2 354 (Batiment PH) Station 3 CH-1015 Lausanne, Switzerland (literal)
Titolo
  • Photodoping and in-gap interface states across the metal-insulator transition in LaAlO3/SrTiO3 heterostructures (literal)
Abstract
  • By using scanning tunneling microscopy/spectroscopy we show that the interface between LaAlO3 and SrTiO3 band insulators is characterized by in-gap interface states. These features were observed in insulating as well as conducting LaAlO3/SrTiO3 bilayers. The data show how the interface density of states evolves across the insulating to metal transition, demonstrating that nanoscale electronic inhomogeneities in the system are induced by spatially localized electrons. (literal)
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