Nanostructure of buried interface layers in TiO2 anatase thin films grown on LaAlO3 and SrTiO3 substrates (Articolo in rivista)

Type
Label
  • Nanostructure of buried interface layers in TiO2 anatase thin films grown on LaAlO3 and SrTiO3 substrates (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1039/C1NR11015B (literal)
Alternative label
  • Regina Ciancio1, Elvio Carlino 1, Carmela Aruta 2, Davide Maccariello 2, Fabio Miletto Granozio 2 and Umberto Scotti di Uccio 2 (2012)
    Nanostructure of buried interface layers in TiO2 anatase thin films grown on LaAlO3 and SrTiO3 substrates
    in Nanoscale (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Regina Ciancio1, Elvio Carlino 1, Carmela Aruta 2, Davide Maccariello 2, Fabio Miletto Granozio 2 and Umberto Scotti di Uccio 2 (literal)
Pagina inizio
  • 91 (literal)
Pagina fine
  • 94 (literal)
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  • 4 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
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  • 1CNR-IOM TASC, Area Science Park, Basovizza S.S. 14 Km 163.5, 34149, Trieste, Italy. E-mail: ciancio@tasc.infm.it 2CNR-SPIN and Dipartimento di Scienze Fisiche, Complesso Universitario di Monte SantAngelo, Via Cintia, I-80126, Napoli, Italy (literal)
Titolo
  • Nanostructure of buried interface layers in TiO2 anatase thin films grown on LaAlO3 and SrTiO3 substrates (literal)
Abstract
  • TiO2 anatase thin films grown by pulsed laser deposition are investigated by high resolution transmission electron microscopy and high angle annular dark field scanning transmission electron microscopy . The analyses provide evidence of a peculiar growth mode of anatase on LaAlO3 and SrTiO3 characterized by the formation of an epitaxial layer at the film/substrate interface, due to cationic diffusion from the substrate into the film region. Pure TiO2 anatase growth occurs in both specimens above a critical thickness of about 20 nm. The microstructural and chemical characterization of the samples is presented and discussed in the framework of oxide interface engineering. (literal)
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