http://www.cnr.it/ontology/cnr/individuo/prodotto/ID203918
A new insight on crystalline strain and defect features by STEM-ADF imaging (Articolo in rivista)
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- A new insight on crystalline strain and defect features by STEM-ADF imaging (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.jcrysgro.2010.10.180 (literal)
- Alternative label
Grillo, Vincenzo and Rossi, Francesca (2011)
A new insight on crystalline strain and defect features by STEM-ADF imaging
in Journal of crystal growth; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
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- Grillo, Vincenzo and Rossi, Francesca (literal)
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- ID_PUMA: cnr.imem/2011-A0-009
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14) Location: Beijing, PEOPLES R CHINA Date: AUG 08-13, 2010
Sponsor(s): Int Org Crystal Growth (IOCG); Chinese Assoc Crystal Growth (CASG) (literal)
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- http://www.sciencedirect.com/science/article/pii/S0022024810009401 (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] CNR, Ctr S3, Ist Nanosci, I-41125 Modena, Italy
[ 2 ] IMEM CNR, I-43010 Parma, Italy (literal)
- Titolo
- A new insight on crystalline strain and defect features by STEM-ADF imaging (literal)
- Abstract
- Scanning TEM with a High Angle Annular Dark Field (HAADF)detector is an outstanding tool for chemical analysis; it permits to image compositional variations at atomic scale as variation in the image intensity. However in the interpretation of HAADF images the role of elastic strain and crystallographic defects are often neglected. For low index specimen orientation crystal imperfections can become very important due to the interplay of strain and channeling effects. Thanks to a recently developed channeling model,the main strain effects on the image can be predicted. An adequate description of these phenomena makes HAADF an interesting technique to complement or substitute traditional TEM characterization in many relevant materials science contexts. Examples will be shown for the case of semiconductor quantum dot, core shell nanowires and dislocations. (literal)
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