http://www.cnr.it/ontology/cnr/individuo/prodotto/ID203431

Suppression of lateral growth in InAs/InAsSb heterostructured nanowires (Articolo in rivista)

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Suppression of lateral growth in InAs/InAsSb heterostructured nanowires (Articolo in rivista) (literal)

Anno

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Alternative label

M. Pea, D. Ercolani, A. Li, M. Gemmi, F. Rossi, F. Beltram, and L. Sorba (2013)
Suppression of lateral growth in InAs/InAsSb heterostructured nanowires
in Journal of crystal growth; elsevier B.V., Amsterdam (Paesi Bassi)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

M. Pea, D. Ercolani, A. Li, M. Gemmi, F. Rossi, F. Beltram, and L. Sorba (literal)

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NEST, Istituto Nanoscienze--CNR and Scuola Normale Superiore, Pisa, Italy; Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Pisa, Italy; CNR-IMEM, Parma, Italy (literal)

Titolo

Suppression of lateral growth in InAs/InAsSb heterostructured nanowires (literal)

Abstract

It is well known that a significant lateral growth is observed in the InAsSb sections of InAs/InAsSb heterostructured nanowires (NWs) with intermediate Sb content that prevents the independent control of NW diameter and length. Here we demonstrate that this lateral growth can be suppressed by increasing the growth temperature of the InAsSb segment and by reducing the InAs stem length. Optimized InAsSb sections show good structural and electrical properties. The mechanism driving this reduced lateral growth and its relevance toward the synthesis of highly controlled InAs/InAsSb heterostructured NWs are discussed. (literal)

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