Fluorine in Ge: Segregation and EOR-defects stabilization (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Fluorine in Ge: Segregation and EOR-defects stabilization (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nimb.2011.08.039 (literal)

Alternative label

• Boninelli S, Impellizzeri G, Priolo F, Napolitani E, Spinella C (2012)
  Fluorine in Ge: Segregation and EOR-defects stabilization
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Boninelli S, Impellizzeri G, Priolo F, Napolitani E, Spinella C (literal)

Pagina inizio

• 21 (literal)

Pagina fine

• 24 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scienceserver.cilea.it/cgi-bin/sciserv.pl?collection=journals&journal=0168583x&issue=v282inone_c (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 282 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Catania, MATIS IMM CNR, I-95123 Catania, Italy [ 2 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy [ 3 ] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy [ 4 ] Univ Padua, MATIS IMM CNR, I-35131 Padua, Italy [ 5 ] IMM CNR, I-95121 Catania, Italy (literal)

Titolo

• Fluorine in Ge: Segregation and EOR-defects stabilization (literal)

Abstract

• In this paper we investigate the F behavior in Ge during solid phase epitaxy (SPE) and post-SPE annealing. Fluorine implanted with a fluence of 1 x 10(15) F/cm(2) and an energy of 35 key induced the formation of an amorphous Ge layer. Detailed chemical and structural characterizations of the as implanted and annealed samples evidenced a strong segregation of F at the moving amorphous/crystalline interface, leading to a remarkable SPE rate retardation. In addition, we observed that F accumulates in correspondence of the end of range (EOR) defects. The comparison between the thermal evolution of damage produced by self-implantation and F implantation in Ge suggests that F increases significantly the stability of EOR. Such behavior clarifies the role of F in modifying the As diffusion in Ge recently reported in literature. (literal)

Prodotto di

• Nuovi Dispositivi di Silicio Oltre il CMOS Scaling (MD.P05.023.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanostrutturati per la fotonica e la sensoristica (MD.P05.027.001) (Modulo)

Autore CNR

• ENRICO NAPOLITANI (Persona)
• SIMONA MARIA CRISTINA BONINELLI (Persona)
• FRANCESCO PRIOLO (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• ROSARIO CORRADO SPINELLA (Persona)

Insieme di parole chiave

• Parole chiave di "Fluorine in Ge: Segregation and EOR-defects stabilization" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi Dispositivi di Silicio Oltre il CMOS Scaling (MD.P05.023.001) (Modulo)
• Materiali e dispositivi nanostrutturati per la fotonica e la sensoristica (MD.P05.027.001) (Modulo)

Autore CNR di

• FRANCESCO PRIOLO (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• ENRICO NAPOLITANI (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• SIMONA MARIA CRISTINA BONINELLI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Insieme di parole chiave di

• Parole chiave di "Fluorine in Ge: Segregation and EOR-defects stabilization" (Insieme di parole chiave)