Elastic Stress Relaxation in HRTEM Specimens of Strained Semiconductor Heterostructures and its Influence on the Image Contrast (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Elastic Stress Relaxation in HRTEM Specimens of Strained Semiconductor Heterostructures and its Influence on the Image Contrast (Articolo in rivista) (literal)

Anno

• 1995-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1051/mmm:1995137 (literal)

Alternative label

• Liberato De Caro, Antonino Giuffrida, Elvio Carlino, Leander Tapfer (1995)
  Elastic Stress Relaxation in HRTEM Specimens of Strained Semiconductor Heterostructures and its Influence on the Image Contrast
  in Microscopy, microanalysis, microstructures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Liberato De Caro, Antonino Giuffrida, Elvio Carlino, Leander Tapfer (literal)

Pagina inizio

• 465 (literal)

Pagina fine

• 472 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 6 (literal)

Rivista

• Microscopy, microanalysis, microstructures (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (1) PASTIS-Centro Nazionale Ricerca e Sviluppo Materiali (PASTIS-CNRSM), Strada Statale 7 Appia km 712, 72100 Brindisi, Italy (2) UniversitàdegliStudidiLecce,DipartimentodiFisica,viaArnesano,73100Lecce,Italy (literal)

Titolo

• Elastic Stress Relaxation in HRTEM Specimens of Strained Semiconductor Heterostructures and its Influence on the Image Contrast (literal)

Abstract

• HRTEM observations require ultra-thinned specimens and, due to the very small thickness (1 to 30 nm), an elastic stress relaxation may occur near the free surfaces of strained heterostructures. These relaxation phenomena can modify the structural features of the thinned specimens with respect to the bulk materials. Thus, the role of the relaxation has to be taken into account if the structural properties of the bulk heterostructures are deduced from those of the thinned specimens. In this work we investigate the case of lattice-mismatched semiconductor superlattices, thinned along the [011]-crystallographic direction. The theoretical evaluation of strain fields in ultra-thinned HRTEM samples shows a bending of the lattice, and the local lattice spacings are representative of neither the bulk tetragonally distorted material nor the unstressed material. Our results show that these distortions can be large and must be taken into account whenever HRTEM is used to deduce the local chemical composition or the unit cell dimensions in strained semiconductor materials. (literal)

Prodotto di

• Institute of Crystallography (IC) (Istituto)
• Sviluppo di metodologie di microscopia elettronica per lo studio a risoluzione atomica delle proprieta' strutturali, elettroniche e magnetiche dei materiali (MD.P04.006.003) (Modulo)

Autore CNR

• ELVIO CARLINO (Unità di personale interno)
• LIBERATO DE CARO (Unità di personale interno)

Incoming links:

Prodotto

• Institute of Crystallography (IC) (Istituto)
• Sviluppo di metodologie di microscopia elettronica per lo studio a risoluzione atomica delle proprieta' strutturali, elettroniche e magnetiche dei materiali (MD.P04.006.003) (Modulo)

Autore CNR di

• LIBERATO DE CARO (Unità di personale interno)
• ELVIO CARLINO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microscopy, microanalysis, microstructures (Rivista)